SI1419DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Published :

2015

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Power Dissipation :

1W

Operating Mode :

ENHANCEMENT MODE

Resistance :

5mOhm

Pbfree Code :

yes

FET Type :

P-Channel

Fall Time (Typ) :

12 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max :

1W Ta

Continuous Drain Current (ID) :

-380mA

Number of Pins :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 10V

Pin Count :

6

Mount :

Surface Mount

ECCN Code :

EAR99

JESD-609 Code :

e3

Threshold Voltage :

-4.5V

Lead Free :

Lead Free

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5 Ω @ 400mA, 10V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Elements :

1

Packaging :

Tape and Reel (TR)

REACH SVHC :

Unknown

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

0.3A

Nominal Vgs :

-4.5 V