SI1416EDH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

58m Ω @ 3.1A, 10V

Continuous Drain Current (ID) :

3.9A

Lead Free :

Lead Free

Number of Terminations :

6

Length :

2.2mm

Drain-source On Resistance-Max :

0.058Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

1.35mm

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Rise Time :

60ns

Power Dissipation-Max :

2.8W Tc

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.56W

Series :

TrenchFET®

Number of Channels :

1

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Weight :

28.009329mg

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Number of Pins :

6

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

25 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

Turn On Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Published :

2014

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

45 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6