SI1414DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Rise Time :

10ns

Weight :

28.009329mg

Drain Current-Max (Abs) (ID) :

4A

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

20 ns

Number of Terminations :

6

Terminal Form :

Gull wing

Turn On Delay Time :

6 ns

Vgs (Max) :

±8V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

15 Weeks

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Power Dissipation-Max :

2.8W Tc

Resistance :

46mOhm

Fall Time (Typ) :

10 ns

Power Dissipation :

1.56W

Rds On (Max) @ Id, Vgs :

46m Ω @ 4A, 4.5V

Mount :

Surface Mount

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Continuous Drain Current (ID) :

4A

Number of Elements :

1