SI1413EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rise Time :

1.6μs

Resistance :

115mOhm

Vgs(th) (Max) @ Id :

450mV @ 100μA (Min)

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Length :

2.1844mm

Mount :

Surface Mount

Continuous Drain Current (ID) :

-2.9A

Number of Pins :

6

ECCN Code :

EAR99

Nominal Vgs :

-450 mV

Power Dissipation :

1W

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Element Configuration :

Single

Pin Count :

6

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

990.6μm

Drain Current-Max (Abs) (ID) :

2.3A

Number of Terminations :

6

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Threshold Voltage :

-450mV

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Fall Time (Typ) :

1.6 μs

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

3.9 µs

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Number of Elements :

1

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

750 ns

Terminal Finish :

PURE MATTE TIN

Series :

TrenchFET®

Published :

2017

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Rds On (Max) @ Id, Vgs :

115m Ω @ 2.9A, 4.5V

JESD-609 Code :

e3

Terminal Position :

Dual

Width :

1.3462mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

1W Ta