SI1411DH-T1-E3
- Mfr.Part #
- SI1411DH-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 420MA SC70-6
- Stock
- 11,479
- In Stock :
- 11,479
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 0.42A
- Power Dissipation-Max :
- 1W Ta
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Drain to Source Breakdown Voltage :
- -150V
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Fall Time (Typ) :
- 11 ns
- Threshold Voltage :
- -4.5V
- Drain to Source Voltage (Vdss) :
- 150V
- Length :
- 2mm
- Number of Terminations :
- 6
- REACH SVHC :
- No SVHC
- Resistance :
- 2.6Ohm
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- P-Channel
- Rise Time :
- 11ns
- Published :
- 2010
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Turn On Delay Time :
- 4.5 ns
- Continuous Drain Current (ID) :
- -520mA
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Weight :
- 28.009329mg
- Current - Continuous Drain (Id) @ 25°C :
- 420mA Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Width :
- 1.25mm
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Series :
- TrenchFET®
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 500mA, 10V
- Mounting Type :
- Surface Mount
- Height :
- 1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 6.3nC @ 10V
- Turn-Off Delay Time :
- 9 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- SI1411DH-T1-E3
P-Channel Tape & Reel (TR) 2.6 Ω @ 500mA, 10V ±20V 6.3nC @ 10V 150V 6-TSSOP, SC-88, SOT-363
SI1411DH-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -520mA amps.In this device, the drain-source breakdown voltage is -150V and VGS=-150V, so the drain-source breakdown voltage is -150V in this case.A device can conduct a maximum continuous current of [0.42A] according to its drain current.It is [9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -4.5V.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
SI1411DH-T1-E3 Features
a continuous drain current (ID) of -520mA
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 9 ns
a threshold voltage of -4.5V
a 150V drain to source voltage (Vdss)
SI1411DH-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1411DH-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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