SI1406DH-T1-GE3
- Mfr.Part #
- SI1406DH-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 3.1A SC70-6
- Stock
- 2,585
- In Stock :
- 2,585
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2013
- Rise Time :
- 47ns
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 8V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 4.5V
- Pin Count :
- 6
- Drain to Source Voltage (Vdss) :
- 20V
- Turn On Delay Time :
- 27 ns
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- TrenchFET®
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1W Ta
- Continuous Drain Current (ID) :
- 3.1A
- ECCN Code :
- EAR99
- Number of Terminations :
- 6
- Fall Time (Typ) :
- 29 ns
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Terminal Finish :
- PURE MATTE TIN
- Turn-Off Delay Time :
- 54 ns
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 3.9A, 4.5V
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±8V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Pbfree Code :
- yes
- Datasheets
- SI1406DH-T1-GE3
N-Channel Tape & Reel (TR) 65m Ω @ 3.9A, 4.5V ±8V 7.5nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363
SI1406DH-T1-GE3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.1A amps.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
SI1406DH-T1-GE3 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 54 ns
a 20V drain to source voltage (Vdss)
SI1406DH-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1406DH-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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