SI1406DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Input Capacitance :

155pF

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.9A, 4.5V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Power Dissipation-Max :

1W Ta

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

54 ns

Power Dissipation :

1W

Turn On Delay Time :

27 ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

29 ns

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Position :

Dual

Radiation Hardening :

No

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

450 mV

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Threshold Voltage :

450mV

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Continuous Drain Current (ID) :

3.1A

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

Series :

TrenchFET®

Rise Time :

47ns

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

Pin Count :

6

Mounting Type :

Surface Mount

Mount :

Surface Mount

Resistance :

65mOhm

Number of Terminations :

6

REACH SVHC :

Unknown