SH8MA4TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

2W Ta

Operating Temperature :

150°C TJ

Number of Terminations :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Current - Continuous Drain (Id) @ 25°C :

9A Ta 8.5A Ta

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

640pF 890pF @ 15V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

18A

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

15.5nC, 19.6nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Packaging :

Cut Tape (CT)

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

21.4m Ω @ 9A, 10V, 29.6m Ω @ 8.5A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0325Ohm

FET Type :

N and P-Channel

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

5.7 mJ

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2