SH8M51GZETB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

3A

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power - Max :

1.4W Ta

Rds On (Max) @ Id, Vgs :

170m Ω @ 3A, 10V, 290m Ω @ 2.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

610pF 1550pF @ 25V

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

12A

Transistor Element Material :

SILICON

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.19Ohm

Gate Charge (Qg) (Max) @ Vgs :

8.5nC, 12.5nC @ 5V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A Ta 2.5A Ta

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED