SH8MA2GZETB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

80m Ω @ 4.5A, 10V, 82m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

125pF 305pF @ 15V

DS Breakdown Voltage-Min :

30V

FET Feature :

Standard

Terminal Position :

Dual

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

3nC, 6.7nC @ 4.5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Avalanche Energy Rating (Eas) :

1.1 mJ

FET Type :

N and P-Channel

Surface Mount :

yes

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain-source On Resistance-Max :

0.08Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

150°C TJ

Power - Max :

1.4W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

12A

Transistor Element Material :

SILICON

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED