SH8KA4TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Power - Max :

3W

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

4.6 mJ

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

21.4m Ω @ 9A, 10V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

9A

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Pulsed Drain Current-Max (IDM) :

18A

Drain Current-Max (Abs) (ID) :

9A

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

21.4Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)