SH8K37GZETB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.7V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 30V

Drain-source On Resistance-Max :

0.066Ohm

Number of Elements :

2

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

4.7 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

5.5A

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Packaging :

Cut Tape (CT)

Power - Max :

1.4W Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

18A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

46m Ω @ 5.5A, 10V

JESD-30 Code :

R-PDSO-G8