SH8K5TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 5V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

83m Ω @ 3.5A, 10V

FET Type :

2 N-Channel (Dual)

Base Part Number :

*K5

Mounting Type :

Surface Mount

Mount :

Surface Mount

Continuous Drain Current (ID) :

3.5A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Published :

2009

Operating Temperature :

150°C TJ

Max Power Dissipation :

2W

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 10V

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

20 Weeks