SCT3080KLGC11
- Mfr.Part #
- SCT3080KLGC11
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 31A TO247N
- Stock
- 95,370
- In Stock :
- 95,370
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 29 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 785pF @ 800V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 1.2kV
- Power Dissipation :
- 165W
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 18V
- Transistor Application :
- SWITCHING
- Height :
- 25.5mm
- Factory Lead Time :
- 21 Weeks
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 77A
- Vgs(th) (Max) @ Id :
- 5.6V @ 5mA
- Rds On (Max) @ Id, Vgs :
- 104m Ω @ 10A, 18V
- Published :
- 2018
- Turn On Delay Time :
- 15 ns
- RoHS Status :
- ROHS3 Compliant
- Max Junction Temperature (Tj) :
- 175°C
- Continuous Drain Current (ID) :
- 31A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Power Dissipation-Max :
- 165W Tc
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 1200V
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Operating Temperature :
- 175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Vgs (Max) :
- +22V, -4V
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Datasheets
- SCT3080KLGC11

N-Channel Tube 104m Ω @ 10A, 18V +22V, -4V 785pF @ 800V 60nC @ 18V 1200V TO-247-3
SCT3080KLGC11 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 785pF @ 800V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 31A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.2kV. And this device has 1.2kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 77A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (18V), this device helps reduce its overall power consumption.
SCT3080KLGC11 Features
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 29 ns
based on its rated peak drain current 77A.
a 1200V drain to source voltage (Vdss)
SCT3080KLGC11 Applications
There are a lot of ROHM Semiconductor
SCT3080KLGC11 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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