SCT3017ALGC11
- Mfr.Part #
- SCT3017ALGC11
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- 650V, 118A, THD, TRENCH-STRUCTUR
- Stock
- 931
- In Stock :
- 931
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Mode :
- Enhancement
- Operating Temp Range :
- -55C to 175C
- FET Type :
- N-Channel
- Package Type :
- TO-247N
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- Rds On (Max) @ Id, Vgs :
- 22.1mOhm @ 47A, 18V
- Operating Temperature Classification :
- Military
- Packaging :
- Rail/Tube
- Vgs(th) (Max) @ Id :
- 5.6V @ 23.5mA
- Configuration :
- Single
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 118A (Tc)
- Product Status :
- Active
- Polarity :
- N
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 175 C
- MSL :
- MSL 1 - Unlimited
- FET Feature :
- -
- Channel Type :
- N
- Supplier Device Package :
- TO-247N
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 650 V
- Mounting :
- Through Hole
- Mounting Type :
- Through Hole
- Continuous Drain Current Id :
- 118
- Continuous Drain Current :
- 118(A)
- Drain-Source On-Volt :
- 650(V)
- Gate Charge (Qg) (Max) @ Vgs :
- 172 nC @ 18 V
- Power Dissipation :
- 427
- RoHS :
- Details
- Pin Count :
- 3 +Tab
- Power Dissipation (Max) :
- 427W
- Number of Channels :
- 1 Channel
- Manufacturer :
- Rohm Semiconductor
- Vgs (Max) :
- +22V, -4V
- Type :
- Power MOSFET
- Rise Time :
- 44 ns
- Subcategory :
- MOSFETs
- Input Capacitance (Ciss) (Max) @ Vds :
- 2884 pF @ 500 V
- Gate-Source Voltage (Max) :
- 22(V)
- Package / Case :
- TO-247-3
- Rad Hardened :
- No
- Operating Temperature :
- 175°C (TJ)
- Brand :
- Rohm Semiconductor
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Series :
- -
- Datasheets
- SCT3017ALGC11
SCT3017ALGC11 Documents
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N-Channel Rail/Tube 22.1mOhm @ 47A, 18V +22V, -4V 2884 pF @ 500 V 172 nC @ 18 V 650 V TO-247-3
SCT3017ALGC11 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2884 pF @ 500 V.Operating this transistor requires a 650 V drain to source voltage (Vdss).
SCT3017ALGC11 Features
a 650 V drain to source voltage (Vdss)
SCT3017ALGC11 Applications
There are a lot of Rohm Semiconductor
SCT3017ALGC11 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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