SCT3017ALGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

650 V

Maximum Operating Temperature :

+ 175 C

Gate-Source Voltage (Max) :

22(V)

Channel Type :

N

Package :

Tube

MSL :

MSL 1 - Unlimited

Mounting Style :

Through Hole

Rise Time :

44 ns

Continuous Drain Current :

118(A)

Power Dissipation (Max) :

427W

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

18V

Rds On (Max) @ Id, Vgs :

22.1mOhm @ 47A, 18V

Subcategory :

MOSFETs

Operating Temperature Classification :

Military

Series :

-

Operating Temp Range :

-55C to 175C

Power Dissipation :

427

Product Type :

MOSFET

Rad Hardened :

No

Product Status :

Active

Vgs (Max) :

+22V, -4V

FET Type :

N-Channel

Pin Count :

3 +Tab

Number of Elements :

1

Channel Mode :

Enhancement

Continuous Drain Current Id :

118

Package Type :

TO-247N

Configuration :

Single

Packaging :

Rail/Tube

Brand :

Rohm Semiconductor

Supplier Device Package :

TO-247N

RoHS :

Details

Type :

Power MOSFET

Vgs(th) (Max) @ Id :

5.6V @ 23.5mA

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

172 nC @ 18 V

Product Category :

MOSFET

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Drain-Source On-Volt :

650(V)

Number of Channels :

1 Channel

Polarity :

N

Current - Continuous Drain (Id) @ 25°C :

118A (Tc)

Mounting :

Through Hole

Package / Case :

TO-247-3

Manufacturer :

Rohm Semiconductor

Input Capacitance (Ciss) (Max) @ Vds :

2884 pF @ 500 V