SCT3030ALGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Operating Temperature :

175°C TJ

Power Dissipation :

262W

Input Capacitance (Ciss) (Max) @ Vds :

1526pF @ 500V

Turn On Delay Time :

22 ns

Max Junction Temperature (Tj) :

175°C

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

262W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

25.5mm

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 18V

Pbfree Code :

yes

Mounting Type :

Through Hole

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Turn-Off Delay Time :

48 ns

Terminal Position :

Single

Number of Channels :

1

Continuous Drain Current (ID) :

70A

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Factory Lead Time :

21 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-609 Code :

e3

Package / Case :

TO-247-3

Vgs (Max) :

+22V, -4V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

650V

Drive Voltage (Max Rds On,Min Rds On) :

18V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5.6V @ 13.3mA

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

39m Ω @ 27A, 18V

Drain-source On Resistance-Max :

0.039Ohm