RW1C026ZPT2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-F6

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Vgs(th) (Max) @ Id :

1V @ 1mA

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

70m Ω @ 2.5A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Published :

2014

ECCN Code :

EAR99

Vgs (Max) :

±10V

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Power Dissipation-Max :

700mW Ta

Terminal Form :

Flat

Terminal Position :

Dual

Factory Lead Time :

12 Weeks

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.07Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.5A

DS Breakdown Voltage-Min :

20V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)