RW1C015UNT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Terminal Form :

Flat

Fall Time (Typ) :

3 ns

Number of Terminations :

6

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.24Ohm

Vgs(th) (Max) @ Id :

1V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Turn On Delay Time :

5 ns

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

10V

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Continuous Drain Current (ID) :

1.5A

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Mounting Type :

Surface Mount

Vgs (Max) :

±10V

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Turn-Off Delay Time :

20 ns

Rise Time :

5ns

Power Dissipation-Max :

400mW Ta