RW1C020UNT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

10V

Lead Free :

Lead Free

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

105m Ω @ 2A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Rise Time :

17ns

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

Tin/Copper (Sn/Cu)

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Terminal Form :

Flat

Power Dissipation-Max :

400mW Ta

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Vgs (Max) :

±10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

30 ns

Number of Channels :

1

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2A

Vgs(th) (Max) @ Id :

1V @ 1mA

Package / Case :

SOT-563, SOT-666

Transistor Application :

SWITCHING

Number of Pins :

6

Turn On Delay Time :

6 ns

Drain Current-Max (Abs) (ID) :

2A

Terminal Position :

Dual

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Operating Temperature :

150°C TJ

Factory Lead Time :

10 Weeks

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

JESD-609 Code :

e2

Mounting Type :

Surface Mount

Number of Elements :

1

Published :

2013

FET Type :

N-Channel

Turn-Off Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6