RUE003N02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

300mA

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

5 ns

Width :

800μm

Turn-Off Delay Time :

15 ns

Package / Case :

SC-75, SOT-416

JESD-609 Code :

e3

Vgs (Max) :

±8V

Pbfree Code :

yes

Power Dissipation-Max :

150mW Ta

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Terminal Position :

Dual

ECCN Code :

EAR99

Mount :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation :

150mW

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1 Ω @ 300mA, 4V

Threshold Voltage :

300mV

Fall Time (Typ) :

10 ns

Height :

700μm

Published :

2008

Element Configuration :

Single

Factory Lead Time :

7 Weeks

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1.6mm

Nominal Vgs :

300 mV

Number of Terminations :

3

Drain-source On Resistance-Max :

1.4Ohm

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3