RUE002N05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

6ns

Drain to Source Voltage (Vdss) :

50V

Turn On Delay Time :

4 ns

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Operating Temperature :

150°C TJ

Number of Terminations :

3

Vgs (Max) :

±8V

Radiation Hardening :

No

Terminal Finish :

Tin/Copper (Sn/Cu)

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

2.4Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pbfree Code :

yes

Package / Case :

SC-75, SOT-416

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

DS Breakdown Voltage-Min :

50V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Published :

2005

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

JESD-609 Code :

e2

Power Dissipation-Max :

150mW Ta

Pin Count :

3

Fall Time (Typ) :

55 ns

ECCN Code :

EAR99

Number of Elements :

1

Number of Pins :

3

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Vgs(th) (Max) @ Id :

1V @ 1mA

FET Type :

N-Channel

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.2A

Turn-Off Delay Time :

15 ns

Continuous Drain Current (ID) :

200mA

Current - Continuous Drain (Id) @ 25°C :

200mA Ta