RUE002N02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 2.5V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN SILVER COPPER

ECCN Code :

EAR99

Turn On Delay Time :

5 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

150mW Ta

Drain-source On Resistance-Max :

1.4Ohm

Lead Free :

Lead Free

Number of Elements :

1

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

8V

Package / Case :

SC-75, SOT-416

Width :

800μm

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

200mA

Length :

1.6mm

Fall Time (Typ) :

10 ns

Pin Count :

3

Radiation Hardening :

No

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 2.5V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Rise Time :

10ns

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pbfree Code :

yes

Vgs (Max) :

±8V

Element Configuration :

Single

Height :

700μm

Vgs(th) (Max) @ Id :

1V @ 1mA

Turn-Off Delay Time :

15 ns

Drain Current-Max (Abs) (ID) :

0.2A