RSS090P03TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Transistor Element Material :

SILICON

Rise Time :

50ns

Mount :

Surface Mount

Terminal Finish :

TIN COPPER

Drain-source On Resistance-Max :

0.014Ohm

Mounting Type :

Surface Mount

Fall Time (Typ) :

80 ns

Turn-Off Delay Time :

150 ns

Turn On Delay Time :

25 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-30V

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

9A

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Pin Count :

8

Lead Free :

Lead Free

Number of Pins :

8

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

36A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

14m Ω @ 9A, 10V

Published :

2004

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

9A

Current Rating :

-9A

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Power Dissipation-Max :

2W Ta