RSS090N03FU6TB
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- Mfr.Part #
- RSS090N03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A 8SOP
- Stock
- 14,528
- In Stock ：
- 14,528
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 15mOhm
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Dual Supply Voltage :
- 30V
- Power Dissipation-Max :
- 2W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2004
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Drain Current-Max (Abs) (ID) :
- 9A
- Fall Time (Typ) :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 9A, 10V
- Nominal Vgs :
- 2.5 V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 30V
- Configuration :
- Single
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 13ns
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Factory Lead Time :
- 17 Weeks
- Threshold Voltage :
- 2.5V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Continuous Drain Current (ID) :
- 9A
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 810pF @ 10V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 46 ns
- Datasheets
- RSS090N03FU6TB
N-Channel Tape & Reel (TR) 15m Ω @ 9A, 10V 810pF @ 10V 15nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS090N03FU6TB Overview
The maximum input capacitance of this device is 810pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4V 10V), this device helps reduce its power consumption.
RSS090N03FU6TB Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 46 ns
a threshold voltage of 2.5V
RSS090N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS090N03FU6TB applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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