RSR030N06TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max :

540mW Ta

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

Element Configuration :

Single

Package / Case :

SC-96

Gate to Source Voltage (Vgs) :

20V

Published :

2009

Drain Current-Max (Abs) (ID) :

3A

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Factory Lead Time :

20 Weeks

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

N-Channel

Turn On Delay Time :

8 ns

Pbfree Code :

yes

Width :

1.8mm

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.105Ohm

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3A

Rds On (Max) @ Id, Vgs :

85m Ω @ 3A, 10V

Fall Time (Typ) :

10 ns

Vgs (Max) :

±20V

Number of Terminations :

3

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Rise Time :

12ns

Height :

950μm

Transistor Element Material :

SILICON

Pin Count :

3

Length :

3mm

Mount :

Surface Mount, Through Hole

Power Dissipation :

1W

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

3A Ta