RSR020P05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2A

Fall Time (Typ) :

10 ns

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 10V

Drain to Source Breakdown Voltage :

-45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Rds On (Max) @ Id, Vgs :

190m Ω @ 2A, 10V

Published :

2012

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Pins :

96

Number of Terminations :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 1mA

Terminal Position :

Dual

Package / Case :

SC-96

Rise Time :

10ns

Drain-source On Resistance-Max :

0.28Ohm

Transistor Element Material :

SILICON

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Continuous Drain Current (ID) :

2A

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mount :

Surface Mount

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

45V

Turn On Delay Time :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Power Dissipation-Max :

540mW Ta