RSR025N03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

70m Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 10V

Termination :

SMD/SMT

Terminal Position :

Dual

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

20 ns

Rise Time :

10ns

Power Dissipation :

1W

Dual Supply Voltage :

30V

Threshold Voltage :

2.5V

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Resistance :

118mOhm

Time@Peak Reflow Temperature-Max (s) :

10

Voltage - Rated DC :

30V

Power Dissipation-Max :

1W Ta

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Package / Case :

SC-96

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

ECCN Code :

EAR99

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Turn On Delay Time :

6 ns

Fall Time (Typ) :

5 ns

FET Type :

N-Channel

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 5V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

20 Weeks

Current Rating :

2.5A

Mounting Type :

Surface Mount

Published :

2006

Nominal Vgs :

2.5 V

Number of Elements :

1

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant