RSJ450N04TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

225ns

Vgs(th) (Max) @ Id :

3V @ 1mA

Mount :

Surface Mount

DS Breakdown Voltage-Min :

40V

Transistor Element Material :

SILICON

Published :

2005

Terminal Form :

Gull wing

Power Dissipation-Max :

50W Tc

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Pin Count :

3

Vgs (Max) :

±20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

390 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

83

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0135Ohm

Pulsed Drain Current-Max (IDM) :

90A

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Turn-Off Delay Time :

90 ns

Continuous Drain Current (ID) :

45A

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V