RSJ400N06TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

3V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

40A Ta

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

80A

Fall Time (Typ) :

140 ns

Published :

2011

Transistor Element Material :

SILICON

Power Dissipation-Max :

50W Tc

Rds On (Max) @ Id, Vgs :

16m Ω @ 40A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

40A

Rise Time :

60ns

Terminal Form :

Gull wing

Number of Channels :

1

Number of Elements :

1

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Terminal Position :

Single

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

90 ns

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 10V