RSJ400N10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Factory Lead Time :

20 Weeks

Pulsed Drain Current-Max (IDM) :

80A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

25 ns

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Turn-Off Delay Time :

205 ns

Rise Time :

80ns

Lead Free :

Lead Free

Number of Elements :

1

Terminal Position :

Single

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

27m Ω @ 40A, 10V

Number of Terminations :

2

Power Dissipation-Max :

1.35W Ta 50W Tc

Mount :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Fall Time (Typ) :

250 ns

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Published :

2012

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Continuous Drain Current (ID) :

40A

Drain-source On Resistance-Max :

0.03Ohm

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

83

Avalanche Energy Rating (Eas) :

14.6 mJ

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE