RSF015N06TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Power Dissipation-Max :

800mW Ta

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Lead Free :

Lead Free

Number of Elements :

1

FET Type :

N-Channel

Number of Channels :

1

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

20V

Rise Time :

9ns

Turn-Off Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

290m Ω @ 1.5A, 10V

Package / Case :

3-SMD, Flat Lead

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Pin Count :

3

Number of Pins :

3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Mount :

Surface Mount

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1.5A

Published :

2011

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

10 ns

Turn On Delay Time :

6 ns

Operating Temperature :

150°C TJ