RSF010P03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

630mOhm

Gate to Source Voltage (Vgs) :

20V

Rise Time :

11ns

Nominal Vgs :

-2.5 V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Power Dissipation-Max :

800mW Ta

Lead Free :

Lead Free

Mount :

Surface Mount

Fall Time (Typ) :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

20 ns

Package / Case :

3-SMD, Flat Lead

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Element Configuration :

Single

Termination :

SMD/SMT

Number of Pins :

3

Terminal Finish :

TIN COPPER

Threshold Voltage :

-2.5V

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

350m Ω @ 1A, 10V

Dual Supply Voltage :

-30V

Drain to Source Breakdown Voltage :

-30V

Published :

2007

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

JESD-609 Code :

e2

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

1.9nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 10V

FET Type :

P-Channel

Continuous Drain Current (ID) :

1A

Power Dissipation :

800mW

Radiation Hardening :

No

Transistor Application :

SWITCHING

ECCN Code :

EAR99