RSF010P05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Voltage (Vdss) :

45V

Rds On (Max) @ Id, Vgs :

460m Ω @ 1A, 10V

JESD-609 Code :

e2

Drain Current-Max (Abs) (ID) :

1A

Terminal Position :

Dual

Package / Case :

3-SMD, Flat Lead

Turn-Off Delay Time :

18 ns

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 5V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

1A

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

-45V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

800mW Ta

Published :

2012

Operating Temperature :

150°C TJ

Fall Time (Typ) :

6 ns

Number of Terminations :

3

Pbfree Code :

yes

Rise Time :

4ns

Pin Count :

3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 10V

Terminal Finish :

Tin/Copper (Sn/Cu)

Turn On Delay Time :

6 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Elements :

1

Drain-source On Resistance-Max :

0.46Ohm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Mounting Type :

Surface Mount