RSD201N10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Rds On (Max) @ Id, Vgs :

46m Ω @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 25V

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Terminations :

2

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

Power Dissipation-Max :

850mW Ta 20W Tc

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

JESD-609 Code :

e2

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Published :

2012

Terminal Finish :

Tin/Copper (Sn98Cu2)

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.05Ohm