RSD200N05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

45V

Number of Terminations :

2

Terminal Finish :

Tin/Copper (Sn98Cu2)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

40A

Mount :

Surface Mount

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Terminal Position :

Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Pin Count :

3

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

28m Ω @ 20A, 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

45V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

20W Tc

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1996

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Drain-source On Resistance-Max :

0.04Ohm

Reach Compliance Code :

not_compliant