RSD221N06TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

Number of Pins :

3

Continuous Drain Current (ID) :

22A

Published :

2012

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

25 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Single

Turn-Off Delay Time :

75 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

850mW Ta 20W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Fall Time (Typ) :

65 ns

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

26m Ω @ 22A, 10V

Vgs(th) (Max) @ Id :

3V @ 1mA

Rise Time :

45ns

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Copper (Sn98Cu2)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

10 Weeks

JESD-609 Code :

e2

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 10V

DS Breakdown Voltage-Min :

60V