RQ5E030RPTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

75m Ω @ 3A, 4.5V

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.075Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.5V @ 1mA

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

12A

Drain Current-Max (Abs) (ID) :

3A

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Terminal Form :

Gull wing

FET Type :

P-Channel

Power Dissipation-Max :

700mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Transistor Element Material :

SILICON

Package / Case :

SC-96

Number of Terminations :

3

Surface Mount :

yes