RQ5E040RPTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Position :

Dual

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

4A

Power Dissipation-Max :

700mW Ta

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 5V

Number of Elements :

1

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.045Ohm

Published :

2017

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

45m Ω @ 4A, 10V

FET Type :

P-Channel

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

30V

Packaging :

Cut Tape (CT)

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SC-96

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

4A Ta