RQ5E025SPTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Drain-source On Resistance-Max :

0.098Ohm

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

2.5A

Power Dissipation-Max :

700mW Ta

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Surface Mount

Number of Terminations :

3

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

98m Ω @ 2.5A, 10V

Terminal Form :

Gull wing

Package / Case :

SC-96