RQ1A060ZPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Published :

2012

Operating Temperature :

150°C TJ

Power Dissipation-Max :

700mW Ta

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Continuous Drain Current (ID) :

6A

Rds On (Max) @ Id, Vgs :

23m Ω @ 6A, 4.5V

Turn On Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Transistor Application :

SWITCHING

FET Type :

P-Channel

Number of Pins :

8

Number of Channels :

1

Vgs (Max) :

±10V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

12V

Terminal Finish :

Tin/Copper (Sn/Cu)

Element Configuration :

Single

JESD-609 Code :

e2

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Rise Time :

105ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

10V

Fall Time (Typ) :

230 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 1mA

Drain to Source Breakdown Voltage :

-12V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 6V

Pin Count :

8

Number of Elements :

1

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Turn-Off Delay Time :

400 ns

Packaging :

Digi-Reel®

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

24A

Time@Peak Reflow Temperature-Max (s) :

10

Drain-source On Resistance-Max :

0.023Ohm