RQ1A070ZPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 6V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 1mA

Pbfree Code :

yes

Published :

2009

Terminal Position :

Dual

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

12V

Pin Count :

8

Package / Case :

8-SMD, Flat Lead

Drain-source On Resistance-Max :

0.012Ohm

Number of Terminations :

8

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

20 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Turn-Off Delay Time :

310 ns

Turn On Delay Time :

35 ns

JESD-609 Code :

e2

Power Dissipation-Max :

700mW Ta

Rds On (Max) @ Id, Vgs :

12m Ω @ 7A, 4.5V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Height :

800μm

Continuous Drain Current (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 4.5V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Length :

3mm

Gate to Source Voltage (Vgs) :

10V

Width :

2.8mm

Vgs (Max) :

±10V

Rise Time :

95ns

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

Terminal Finish :

Tin/Copper (Sn/Cu)

Mount :

Surface Mount

Number of Pins :

8

DS Breakdown Voltage-Min :

12V

Drain Current-Max (Abs) (ID) :

7A

Fall Time (Typ) :

190 ns