RQ1A070ZPTR
- Mfr.Part #
- RQ1A070ZPTR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 7A TSMT8
- Stock
- 10,633
- In Stock :
- 10,633
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 8
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Operating Temperature :
- 150°C TJ
- FET Type :
- P-Channel
- Width :
- 2.8mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 7400pF @ 6V
- Gate to Source Voltage (Vgs) :
- 10V
- Number of Terminations :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- JESD-609 Code :
- e2
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Factory Lead Time :
- 20 Weeks
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 310 ns
- Fall Time (Typ) :
- 190 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Published :
- 2009
- DS Breakdown Voltage-Min :
- 12V
- Turn On Delay Time :
- 35 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 7A
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 7A, 4.5V
- Package / Case :
- 8-SMD, Flat Lead
- Radiation Hardening :
- No
- Vgs (Max) :
- ±10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 95ns
- Length :
- 3mm
- Transistor Application :
- SWITCHING
- Height :
- 800μm
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.012Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 4.5V
- Drain to Source Voltage (Vdss) :
- 12V
- Power Dissipation-Max :
- 700mW Ta
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 7A
- Datasheets
- RQ1A070ZPTR

P-Channel Tape & Reel (TR) 12m Ω @ 7A, 4.5V ±10V 7400pF @ 6V 58nC @ 4.5V 12V 8-SMD, Flat Lead
RQ1A070ZPTR Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7400pF @ 6V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.7A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 310 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 12V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 12V.Using drive voltage (1.5V 4.5V) reduces this device's overall power consumption.
RQ1A070ZPTR Features
a continuous drain current (ID) of 7A
the turn-off delay time is 310 ns
a 12V drain to source voltage (Vdss)
RQ1A070ZPTR Applications
There are a lot of ROHM Semiconductor
RQ1A070ZPTR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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