RQ1A070APTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

550mW Ta

Vgs (Max) :

-8V

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

12V

Published :

2011

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 1mA

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

14m Ω @ 7A, 4.5V

Number of Pins :

8

Pin Count :

8

Continuous Drain Current (ID) :

7A

Operating Temperature :

150°C TJ

FET Type :

P-Channel

Lead Free :

Lead Free

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Drain Current-Max (Abs) (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 6V

Drain-source On Resistance-Max :

0.014Ohm

DS Breakdown Voltage-Min :

12V

Package / Case :

8-SMD, Flat Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

20 Weeks

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99