RN4907,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

80

Factory Lead Time :

12 Weeks

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

50V

Current - Collector (Ic) (Max) :

100mA

Resistor - Base (R1) :

10kOhms

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Packaging :

Cut Tape (CT)

Length :

2mm

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Voltage - Collector Emitter Breakdown (Max) :

50V

Published :

2014

Resistor - Emitter Base (R2) :

47kOhms

Number of Channels :

2

Supplier Device Package :

US6

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Continuous Collector Current :

100mA

Height :

900μm

Frequency - Transition :

200MHz

Max Operating Temperature :

150°C

Max Power Dissipation :

200mW

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Width :

1.25mm

Collector Emitter Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

6V