RN4902FE,LF(CT
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- Mfr.Part #
- RN4902FE,LF(CT
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN/PNP PREBIAS 0.1W ES6
- Stock
- 226,634
- In Stock ：
- 226,634
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Weight :
- 3.005049mg
- Resistor - Base (R1) :
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Cut Tape (CT)
- Continuous Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Max Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 10V
- Power - Max :
- 100mW
- Max Collector Current :
- 100mA
- Supplier Device Package :
- ES6
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Current - Collector Cutoff (Max) :
- 500nA
- Frequency - Transition :
- 250MHz 200MHz
- Current - Collector (Ic) (Max) :
- 100mA
- Package / Case :
- SOT-563, SOT-666
- Factory Lead Time :
- 12 Weeks
- Published :
- 2014
- hFE Min :
- 50
- Number of Channels :
- 2
- Polarity :
- NPN, PNP
- Resistor - Emitter Base (R2) :
- 10kOhms
- Max Power Dissipation :
- 100mW
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Datasheets
- RN4902FE,LF(CT
RN4902FE,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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