RN2906,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Length :

2mm

Max Collector Current :

100mA

Power - Max :

200mW

Collector Base Voltage (VCBO) :

-50V

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

12 Weeks

Height :

900μm

Max Power Dissipation :

200mW

Continuous Collector Current :

-100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Mount :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

50V

Polarity :

PNP

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Published :

2014

Number of Pins :

6

Width :

1.25mm

RoHS Status :

RoHS Compliant

Current - Collector (Ic) (Max) :

100mA

Resistor - Emitter Base (R2) :

47kOhms

Collector Emitter Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

-5V

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

4.7kOhms

Packaging :

Cut Tape (CT)

hFE Min :

80

Collector Emitter Voltage (VCEO) :

300mV

Min Operating Temperature :

-55°C

Supplier Device Package :

US6

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Transistor Type :

2 PNP - Pre-Biased (Dual)