RK7002BT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

200mW

Terminal Position :

Dual

Rise Time :

5ns

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Pbfree Code :

yes

Factory Lead Time :

6 Weeks

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

28 ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 25V

Resistance :

2.4Ohm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Lead Free :

Lead Free

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.25A

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

250mA

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Turn-Off Delay Time :

18 ns

ECCN Code :

EAR99

Published :

2010

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

3.5 ns

Number of Pins :

3

Power Dissipation-Max :

200mW Ta

Number of Terminations :

3

Radiation Hardening :

No

Number of Elements :

1