RK7002BMT116
- Mfr.Part #
- RK7002BMT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 250MA SST3
- Stock
- 417,484
- In Stock :
- 417,484
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 200mW Ta
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 15pF @ 25V
- Continuous Drain Current (ID) :
- 250mA
- Vgs(th) (Max) @ Id :
- 2.3V @ 1mA
- Drain-source On Resistance-Max :
- 3.2Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 18 ns
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Published :
- 2014
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 28 ns
- Drain to Source Breakdown Voltage :
- 60V
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 250mA Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Rise Time :
- 5ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 0.25A
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 2.4 Ω @ 250mA, 10V
- Turn On Delay Time :
- 3.5 ns
- JESD-30 Code :
- R-PDSO-G3
- Datasheets
- RK7002BMT116

N-Channel Tape & Reel (TR) 2.4 Ω @ 250mA, 10V ±20V 15pF @ 25V TO-236-3, SC-59, SOT-23-3
RK7002BMT116 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 15pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 250mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.25A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 3.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (2.5V 10V), this device helps reduce its overall power consumption.
RK7002BMT116 Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 18 ns
RK7002BMT116 Applications
There are a lot of ROHM Semiconductor
RK7002BMT116 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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