RK7002BMT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

3.5 ns

Drain-source On Resistance-Max :

3.2Ohm

JESD-30 Code :

R-PDSO-G3

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 25V

FET Type :

N-Channel

Rise Time :

5ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Operating Temperature :

150°C TJ

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.25A

Turn-Off Delay Time :

18 ns

Fall Time (Typ) :

28 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Terminal Form :

Gull wing

Number of Terminations :

3

Continuous Drain Current (ID) :

250mA

Power Dissipation-Max :

200mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Published :

2014

Transistor Application :

SWITCHING

ECCN Code :

EAR99