RGWSX2TS65GC13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Voltage - Collector Emitter Breakdown (Max) :

650 V

Power - Max :

288 W

Mounting Type :

Through Hole

Switching Energy :

1.43mJ (on), 1.2mJ (off)

Test Condition :

400V, 60A, 10Ohm, 15V

Continuous Collector Current :

104A

Td (on/off) @ 25°C :

55ns/180ns

Power Dissipation :

288W

Configuration :

Single Collector, Single Emitter, Single Gate

Package Type :

TO-247GE

RoHS :

Details

Manufacturer :

Rohm Semiconductor

Product Type :

IGBT Transistors

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 60A

IGBT Type :

Trench Field Stop

Current - Collector Pulsed (Icm) :

180 A

Input Type :

Standard

Subcategory :

IGBTs

Series :

-

Operating Temperature :

-40°C ~ 175°C (TJ)

Packaging :

Tube

Package / Case :

TO-247-3

Gate Charge :

140 nC

Current - Collector (Ic) (Max) :

104 A

Product Category :

IGBT Transistors

Minimum Operating Temperature :

- 40 C

Mounting Style :

Through Hole

Package :

Tube

Product Status :

Active

Supplier Device Package :

TO-247G

Maximum Operating Temperature :

+ 175 C

Brand :

Rohm Semiconductor

Collector Emitter Saturation Voltage :

2V

Technology :

Si