RGT8NS65DGC9

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Gate Charge :

13.5nC

Voltage - Collector Emitter Breakdown (Max) :

650V

Reverse Recovery Time :

40ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Time :

54 ns

Terminal Position :

Single

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

17ns/69ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Current - Collector Pulsed (Icm) :

12A

Turn Off Time-Nom (toff) :

158 ns

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

65W

Test Condition :

400V, 4A, 50 Ω, 15V

Transistor Application :

POWER CONTROL

JESD-30 Code :

R-PSIP-T3

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 4A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Current - Collector (Ic) (Max) :

8A

IGBT Type :

Trench Field Stop

Surface Mount :

No

Operating Temperature :

-40°C~175°C TJ