RGT8TM65DGC9

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 4A

IGBT Type :

Trench Field Stop

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~175°C TJ

Turn On Time :

54 ns

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

12A

Current - Collector (Ic) (Max) :

5A

Reverse Recovery Time :

40ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Type :

Standard

Gate Charge :

13.5nC

Td (on/off) @ 25°C :

17ns/69ns

Number of Elements :

1

Case Connection :

Isolated

Power - Max :

16W

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

650V

Turn Off Time-Nom (toff) :

158 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Test Condition :

400V, 4A, 50 Ω, 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

JEDEC-95 Code :

TO-220AB